Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – With textured surface
Reexamination Certificate
2007-10-23
2007-10-23
Nguyen, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
With textured surface
C257S633000, C257S686000, C257SE21512, C257SE23110
Reexamination Certificate
active
10855979
ABSTRACT:
To prevent the occurrence of stress in the junction portion between the semiconductor element and the semiconductor package mounting the semiconductor element, so that cracks will not occur even when there is mounted a semiconductor element having a small strength. A package for semiconductor devices is formed as a laminate (20) of many layers including a plurality of conducting layers and insulating resin layers that are alternately laminated one upon other and having, on one surface of the laminate, a portion for mounting a semiconductor element. The whole regions or some regions of the insulating resin layers (20dto20f) of the laminate, including at least the portion for mounting the semiconductor element and the peripheries thereof, are constituted by a prepreg obtained by impregnating a woven fabric of a liquid crystal polymer with an insulating resin.
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Kodaira Tadashi
Matsumoto Shun-ichiro
Nakamura Jyunichi
Ooi Kazuhiko
Watari Eisaku
Nguyen Andy
Nguyen Dao H.
Shinko Electric Industries Co. Ltd.
Staas & Halsey , LLP
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