Package for photoactivated semiconductor device

Radiant energy – Ionic separation or analysis – Static field-type ion path-bending selecting means

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357 30, 357 70, 357 85, 250551, H01L 3112, H01L 3116, H01L 2960

Patent

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047944315

ABSTRACT:
Included in a package for a photoactivated semiconductor device is a planar lead pattern. The lead pattern may comprise a repeated pattern of a lead frame. A pair of photoactivated semiconductor devices are mounted on respective portions of the lead frame. The semiconductor devices may be rectangular in configuration so as to have four generally-straight edges. A light-emitting device is mounted on a respective portion of the lead pattern. The geometrical interrelationship between the semiconductor devices and the light-emitting device achieves a high degree of optical coupling between the light-emitting device and the semiconductor devices. In particular, the semiconductor devices are positioned such that confronting, respective first edges of these devices are out of parallel with each other. The light-emitting device is then positioned to be orthogonally offset from both of the respective first edges of the semiconductor devices. To further enhance the optical coupling in the package, a transparent material is provided over the semiconductor devices and the light-emitting device. The transparent material is configured with a convex shape above the planar lead pattern. Atop the transparent material is an opaque covering material which forms an interface with the transparent material that is highly reflective to light in the visible and infrared bands.

REFERENCES:
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patent: 4112308 (1978-09-01), Olschewski et al.
patent: 4114177 (1978-09-01), King
patent: 4152044 (1979-05-01), Liu
patent: 4322628 (1982-03-01), Tanaka
patent: 4535251 (1985-08-01), Herman et al.
patent: 4596050 (1986-06-01), Rogers

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