Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Reexamination Certificate
2009-03-23
2011-11-08
Trinh, Hoa B (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
C257SE23192, C257S781000
Reexamination Certificate
active
08053803
ABSTRACT:
A package for an optical semiconductor element is provided. The package includes: a stem body having a sealing hole therein; and a lead pin having a glass sealing portion which is sealed with sealing glass in the sealing hole. Characteristic impedance of the glass sealing portion is adjusted to a given value. The characteristic impedance Zo is given by: Zo=(138/Er1/2)×log(D/d), where a hole diameter of the sealing hole is D, a wire diameter of the lead pint is d, and a dielectric constant of the sealing glass is Er, and the dielectric constant Er of the sealing glass is set by controlling an amount of bubble contained in the sealing glass.
REFERENCES:
patent: 4951011 (1990-08-01), Heckaman et al.
patent: 6074102 (2000-06-01), Oikawa
patent: 2003/0020149 (2003-01-01), Ogura et al.
patent: 2004/0138045 (2004-07-01), Komatsudani et al.
patent: 2007053252 (2007-01-01), None
patent: 2007-220843 (2007-08-01), None
Drinker Biddle & Reath LLP
Shinko Electric Industries Co. Ltd.
Trinh Hoa B
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