Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Patent
1992-01-13
1993-08-10
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
257728, 257698, 333247, H01L 2312, H01L 2314
Patent
active
052352080
ABSTRACT:
A package for a microwave integrated circuit includes a first dielectric layer having a surface for mounting a microwave integrated circuit on which a transmission line is disposed, a second dielectric layer laminated on the first dielectric layer for surrounding a microwave integrated circuit, a first grounding metal layer on the rear surface of the first dielectric layer, a second grounding metal layer on the second dielectric layer, a first intermediate layer grounding metal on the same plane as the transmission line and forming a co-planar type line with the transmission line, and via holes electrically connecting the intermediate layer grounding metal with the first and second grounding metal layers. Therefore, the transmission line is shielded parallel to the direction of the transmission line. As a result, the spacing of the shielding metal in a cross section perpendicular from the transmission line is reduced, suppressing the inductive component of the package.
REFERENCES:
patent: 4881116 (1989-11-01), Hidada et al.
patent: 4890155 (1989-12-01), Miyagawa et al.
patent: 4922324 (1990-05-01), Sudo
Ishitsuka et al., "Low Cost, High-Performance Package For A Multi-Chip MMIC Module", GaAs IC Symposium, IEEE Technical Digest, 1988, pp. 221-224.
Bettner et al., "A Low Cost `Monolithic-Monolithic` Gain Module", Microwave Journal, 1987, pp. 109-113.
Clark S. V.
Hille Rolf
Mitsubishi Denki & Kabushiki Kaisha
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