Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – In combination with or also constituting light responsive...
Reexamination Certificate
2011-08-23
2011-08-23
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
In combination with or also constituting light responsive...
C257S088000, C257S098000, C257S099000, C257S918000, C385S014000, C385S129000
Reexamination Certificate
active
08003997
ABSTRACT:
The present invention discloses a light emitting device package, comprising: a metal base; an electrical circuit layer provided at an upper side of the metal base for providing a conductive path; a light emitting device mounted in a second region having a smaller thickness than a first region on the metal base; an insulating layer sandwiched between the meta base and the electrical circuit layer; an electrode layer provided at an upper side of the electrical circuit layer; and a wire for electrically connecting the electrode layer and the light emitting device. Further, there is provided a light emitting device package which is improved in light emission efficiency since the light emitting device is placed on a small thickness portion of the metal base.
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Machine English translation of JP-08-008463.
Machine English translation of JP-10-012927.
Machine English translation of JP-2003-008073.
Machine English translation of JP-2004-039691.
Machine English translation of JP-2004-311791.
Birch & Stewart Kolasch & Birch, LLP
LG Innotek Co., Ltd
Pham Thanh V
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