Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Insulating material
Reexamination Certificate
2005-07-26
2005-07-26
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Insulating material
C257S703000, C257S712000, C257S711000, C257S720000, C257S741000, C257S747000, C257S706000, C257S675000, C257S765000, C257S743000, C257S744000
Reexamination Certificate
active
06921970
ABSTRACT:
A lid material (1) according to the present invention comprises: a base layer (2) composed of a low thermal expansion metal; an intermediate metal layer (3) provided on one surface of the base layer (2) and composed of a low proof stress metal having a proof stress of not greater than 110 N/mm2; and a brazing material layer (4) provided on the intermediate metal layer (3) and composed of a silver brazing alloy mainly comprising silver. The intermediate metal layer (3) and the brazing material layer (4) are press- and diffusion-bonded to each other, and the brazing material layer (4) has a blistered area ratio of not greater than 0.5% as observed on an outer surface of the brazing material layer. The low proof stress metal is preferably oxygen-free copper. A lid produced from the lid material (1) exhibits an excellent bonding property when the lid is brazed to a case mainly composed of a ceramic material for an electronic component package. Further, the lid suppresses the breakage of the case, and ensures excellent brazing workability.
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Ishio Masaaki
Shiomi Kazuhiro
Daishinku Corporation
Erdem Fazli
Flynn Nathan J.
Keating & Bennett LLP
Neomax Materials Co., Ltd.
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