Package for a power semiconductor die and power supply employing

Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond

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Details

257782, 257692, 257693, 257698, 174 524, H01L 2302, H02M 7521

Patent

active

058724036

ABSTRACT:
A method of mounting a power semiconductor die on a substrate, a package for the die and a power supply including the package. The die has a first power terminal on a first surface thereof and a second power terminal on an opposing second surface thereof. The method including the steps of: (1) forming an electrically-conductive, mechanical bond between the first surface and a first location on the substrate, the mechanical bond electrically coupling the first power terminal to the substrate and (2) soldering an elongated electrically conductive strap to the second surface and a second location on the substrate, the conductive strap composed of a material having an electrical resistivity at most about 5.0.times.10-.sup.8 ohm-meters (.OMEGA.-m) and forming a low impedance path between the second power terminal and the second location.

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Disclosure entitled: "Interleaved Forward Converter Using Zero-Voltage Resonant Transition Switching for Distributed Power Processing" Authors: c.P. Henze, D.S. Lo and J.H. Mulkern of Unisys Corporation; pp. 1-18.
Disclosure entitled: "High-Frequency Forward ZVS-MRC For a Low-Profile High-Density On-Board Power Supply" Authors: Wojciech A. Tabisz, Richard T. Gean and Fred C. Lee; pp. 21-30.

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