Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With enlarged emitter area
Patent
1992-09-28
1994-05-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With enlarged emitter area
257587, 257693, 257698, 257704, H01L 2302
Patent
active
053130910
ABSTRACT:
A package for a high power electrical component includes a base and a plate disposed on a support surface of the base and having an electrically insulative layer and an outer layer having a conductive portion thereon. An electrically conductive pad is disposed on the electrically conductive portion of the plate and the electrical component is disposed on the pad. A cover is disposed atop the base and encloses the plate, the pad and the electrical component. First and second electrically conductive terminals extend through apertures in the cover and are electrically coupled to the electrodes of the electrical component. The cover is hermetically sealed to the base and to the first and second terminals. The coefficient of thermal expansion of the base and cover are substantially equal to minimize stresses developed therein.
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Anderson W. Kyle
Jackson Stephen E.
Pershall Arthur
Sterling Robert J.
Thomas Lee
Hille Rolf
Potter Roy
Sundstrand Corporation
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