Package for a high frequency semiconductor device and methods fo

Electricity: conductors and insulators – Boxes and housings – Hermetic sealed envelope type

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257664, 257704, 257728, H01L 2302

Patent

active

055961711

ABSTRACT:
A package for a semiconductor die, particularly field effect transistors, operating at very high frequencies includes a base having integrally formed conductor supports. The base and the supports are formed from a thermo-formed or thermo-set plastic material. Metal conductors are plated to the supports and terminate in pads for connecting the die to an external circuit. A die is attached to the base and wires bonded to the package conductor pads. The surface of the die, the bond wires and the surface of the package conductors are substantially coplanar to reduce abrupt changes in the path of signal flow which reduces radiation losses. Package dimensions and conductor proximities and bond wire lengths are precisely located and enhanced to reduce parasitic inductances. When connected to an external circuit, the package is flipped and its lid inserted into a hole in the circuit board. The package conductors rest against the circuit board to the semiconductor device. The manufacture and assembly of the package is reliable and suited to commercial applications.

REFERENCES:
patent: 3517279 (1970-06-01), Ikeda et al.
patent: 3681513 (1972-08-01), Hargis
patent: 3768157 (1973-10-01), Buie
patent: 3784884 (1974-01-01), Zoroglu
patent: 3836993 (1974-09-01), Joshi
patent: 3913040 (1975-10-01), Rosen et al.
patent: 3936866 (1976-02-01), Grossman et al.
patent: 3961415 (1976-06-01), Davis, Jr.
patent: 3986196 (1976-10-01), Decker et al.
patent: 4150393 (1979-04-01), Wilson et al.
patent: 4168507 (1979-09-01), Yester, Jr.
patent: 4340902 (1982-07-01), Honda et al.
patent: 4486622 (1984-12-01), Dathe et al.
patent: 4538124 (1985-08-01), Morrison
patent: 4618879 (1986-10-01), Mizukoshi et al.
patent: 4737236 (1988-04-01), Perko et al.
patent: 4739389 (1988-04-01), Goedblood
patent: 4779338 (1988-10-01), Kohara et al.
patent: 4786256 (1988-11-01), Angeleri et al.
patent: 4788584 (1988-11-01), Hirano et al.
patent: 4839712 (1989-06-01), Mamodaly et al.
patent: 4857671 (1989-08-01), Nakano et al.
patent: 4891686 (1990-01-01), Krausse, III
patent: 4922324 (1990-05-01), Sudo
patent: 4946733 (1990-08-01), Seeger, Jr. et al.
patent: 4962415 (1990-10-01), Yamamoto et al.
patent: 5014159 (1991-05-01), Butt
patent: 5188984 (1993-02-01), Nishiguchi
patent: 5258647 (1993-11-01), Wojnarowski et al.
patent: 5297333 (1994-03-01), Kusaka
patent: 5302492 (1994-04-01), Ott et al.
patent: 5313367 (1994-05-01), Ishiyama
patent: 5349501 (1994-09-01), Kawakami
patent: 5359227 (1994-10-01), Liang et al.
patent: 5371321 (1994-12-01), Hamxehdoost et al.
patent: 5399902 (1995-03-01), Bickford et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Package for a high frequency semiconductor device and methods fo does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Package for a high frequency semiconductor device and methods fo, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Package for a high frequency semiconductor device and methods fo will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2325760

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.