Package for a high-frequency electronic device

Details Package for a high-frequency electronic device Package for a high-frequency electronic device

2006-08-29

2006-08-29

Andujar, Leonardo (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With semiconductor element forming part

C257S686000, C257S728000

Reexamination Certificate

active

07098530

ABSTRACT:
The electronic device comprises a substrate (1) with a cavity (6) in which an active device (8) is present. On the first side (2) of the substrate an interconnect structure (17) extends over the cavity and the substrate. On the second side (3) of the substrate to which the cavity extends, a heat sink (23) is available. The device is particularly suitable for use at high frequencies, for instance higher than 2 GHz and under conditions of high dissipation.

REFERENCES:
patent: 5351001 (1994-09-01), Kornrumpf et al.
patent: 5418687 (1995-05-01), Chen
patent: 5506383 (1996-04-01), Chen
patent: 5523622 (1996-06-01), Harada et al.
patent: 5998859 (1999-12-01), Griswold et al.
patent: 6931725 (2005-08-01), Sugaya et al.
patent: 1 111 674 (2001-06-01), None
patent: 1 298 728 (2003-04-01), None

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