P-type zinc oxide semiconductor film and process for...

Details P-type zinc oxide semiconductor film and process for... P-type zinc oxide semiconductor film and process for...

2008-05-06

2008-05-06

Kopec, Mark (Department: 1796)

Compositions

Electrically conductive or emissive compositions

C117S108000, C257S043000, C423S624000, C438S046000, C438S093000, C438S483000, C438S488000

Reexamination Certificate

active

11042314

ABSTRACT:
A p-type ZnO semiconductor film comprised mainly of Zn and O elements is disclosed. The film is characterized as containing an alkali metal and nitrogen. Preferably, the alkali metal is contained such that its concentration is distributed to increase toward an end or toward both ends in the thickness direction of the film. More preferably, the alkali metal is contained in the concentration range of 1×1018-5×1021cm−3and the nitrogen in the concentration range of 2×1017-5×1020cm−3.

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Nakahara K. et al. “Growth of N-doped and Ga + N-codoped ZnO films by radical source molecular beam epitaxy.” Journal of Crystal Growth, 237-239, 2002, pp. 503-508.
Sumiya, M., et al. “SIMS analysis of ZnO films co-doped with N and Ga by temperature gradient pulsed laser deposition.” Applied Surface Science, 223, 2004, pp. 206-209.
Sumiya et al.; “IMS Analysis of ZnO Films Co-Doped with N and Ga by Temperature Gradient Pulsed Laser Deposition”;Applied Surface Science 223; c. 2003; pp. 206-209.

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