P-type silicon wafer and method for heat-treating the same

Details P-type silicon wafer and method for heat-treating the same P-type silicon wafer and method for heat-treating the same

2005-08-10

2009-06-02

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

With specified dopant

Deep level dopant

C257SE23137, C257SE21085

Reexamination Certificate

active

07541663

ABSTRACT:
This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×107defects/cm3or more, and an n-type impurity concentration of 1×1014atoms/cm3or less at a depth of within 5 μm from a surface of the wafer. This method for heat-treating p-type silicon wafers, the method includes the steps of: loading p-type silicon wafers onto a wafer boat, inserting into a vertical furnace, and holding in an argon gas ambient atmosphere at a temperature of 1100 to 1300° C. for one hour; moving the wafer boat to a transfer chamber and discharging the silicon wafers; and transferring to the wafer boat silicon wafers to be heat treated next, wherein after the discharge of the heat-treated silicon wafers, the silicon wafers to be heat-treated next are transferred to the wafer boat within a waiting time of less than two hours.

REFERENCES:
patent: 6544656 (2003-04-01), Abe et al.
patent: 2001/0037761 (2001-11-01), Ries et al.
patent: 2004/0009111 (2004-01-01), Haga et al.
patent: 2005/0250297 (2005-11-01), Shive et al.
patent: WO 0173838 (2001-10-01), None

Affiliated with

Also associated with

Rating

P-type silicon wafer and method for heat-treating the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with P-type silicon wafer and method for heat-treating the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and P-type silicon wafer and method for heat-treating the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4062849