P-type nitrogen compound semiconductor and method of manufacturi

Details P-type nitrogen compound semiconductor and method of manufacturi P-type nitrogen compound semiconductor and method of manufacturi

1998-05-26

2000-08-15

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257102, 257103, 438 46, 438 47, H01L 3300

Patent

active

061040398

ABSTRACT:
A plurality of first layers made of AlGaN mixed crystal each having a thickness of the order of 1 to 100 nm and a plurality of second layers of p-type GaN with Mg each having a thickness of the order of 1 to 100 nm are alternately stacked. Since each of the first and second layers is thin, the stacked layers as a whole have properties of p-type AlGaN mixed crystal although the first layers do not include Mg and the second layers do not include Al. An Al source and a Mg source are temporally separated to be introduced in a stacking process. A reaction between the Al source and Mg source which may interfere desirable crystal growth is thereby prevented. Crystals of good quality are thus grown and electrical conductivity is thereby improved.

REFERENCES:
patent: 4862471 (1989-08-01), Pankove
patent: 5005057 (1991-04-01), Izumiya et al.
patent: 5146465 (1992-09-01), Khan et al.
patent: 5831277 (1998-11-01), Razeghi

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