P-type metal oxide semiconductor material and fabrication...

Details P-type metal oxide semiconductor material and fabrication... P-type metal oxide semiconductor material and fabrication...

2011-08-30

2011-08-30

Mc Ginty, Douglas (Department: 1765)

Compositions

Electrically conductive or emissive compositions

Metal compound containing

C252S519100

Reexamination Certificate

active

08007694

ABSTRACT:
A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1O.

REFERENCES:
patent: 6420742 (2002-07-01), Ahn et al.
patent: 2005/0130844 (2005-06-01), Iwata
patent: 101320814 (2008-12-01), None
Kuo-Chuang Chiu et al., “Fabrication of p-Type Li-Doped ZnO Films by RF Magnetron Sputtering”, J. Am. Ceram. Soc., 93(7), 1860-1862 (2010).
English translation of CN 101320814 A, Dec. 10, 2008.
Xie Xinghua et al., “Synthesis of Lithium and Zinc Oxide Nanoagglomerations”, Rare Metal Materials and Engineering, 35 (Supp. 2), 355-358 (Aug. 2006).

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