P-type II-VI compound semiconductor doped

Details P-type II-VI compound semiconductor doped P-type II-VI compound semiconductor doped

1990-11-21

1992-09-22

Larkins, William D.

357 63, 357 17, H01L 29227

Patent

active

051501910

ABSTRACT:
An optical semiconductor device is provided with a p-type ZnSe semiconductor layer. Si, Cl and O atoms are added, as dopants, to the ZnSe semiconductor layer. Associations of the Si, Cl and O atoms are formed to define a shallow acceptor level in the semiconductor layer. Each of the associations comprises one Si atom, one Cl atom and one O atom by which the lattice points of Se are displaced between those crystal lattice points in the semiconductor layer which are adjacent to one another.

REFERENCES:
patent: 3549434 (1970-12-01), Aven
patent: 3578507 (1971-05-01), Chiang et al.
patent: 3670220 (1972-06-01), Kun et al.
patent: 4868615 (1989-09-01), Kamata
patent: 4904618 (1990-02-01), Neumark

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