Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2005-05-11
2010-02-02
Pizarro, Marcos D. (Department: 2814)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
Reexamination Certificate
active
07655491
ABSTRACT:
An object of the present invention is to provide a method for producing a p-type Group III nitride semiconductor which can be used to produce a light-emitting device exhibiting a low operation voltage and a sufficiently high reverse voltage.The inventive method for producing a p-type Group III nitride semiconductor comprises, during lowering temperature after completion of growth of a Group III nitride semiconductor containing a p-type dopant,immediately after completion of the growth, starting, at a temperature at which the growth has been completed, supply of a carrier gas composed of an inert gas and reduction of the flow rate of a nitrogen source; andstopping supply of the nitrogen source at a time in the course of lowering the temperature.
REFERENCES:
patent: 6015979 (2000-01-01), Sugiura et al.
patent: 6067309 (2000-05-01), Onomura et al.
patent: 6365923 (2002-04-01), Kamei
patent: 2005/0042787 (2005-02-01), Ito et al.
patent: 2007/0090369 (2007-04-01), Kobayakawa
patent: 1 179 859 (2002-02-01), None
patent: 09-199758 (1997-07-01), None
patent: 10-84160 (1998-03-01), None
patent: 2001-102623 (2001-04-01), None
patent: 2001-119064 (2001-04-01), None
patent: 2002-57161 (2002-02-01), None
patent: 2003-133649 (2003-05-01), None
patent: 2003-243302 (2003-08-01), None
patent: 2004-80047 (2004-03-01), None
patent: 2004-96021 (2004-03-01), None
patent: WO 03/068699 (2003-08-01), None
Miki Hisayuki
Takeda Hitoshi
Montalvo Eva Yan
Pizarro Marcos D.
Showa Denko K.K.
Sughrue & Mion, PLLC
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