P-type gallium nitride

Details P-type gallium nitride P-type gallium nitride

1993-11-01

1997-08-12

Bovernick, Rodney B.

Coherent light generators

Particular active media

Semiconductor

372 43, 372 45, 257 12, 257103, 117108, 252 633, 438 46, 438522, H01L 3300

Patent

active

056573359

ABSTRACT:
Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

REFERENCES:
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patent: 5239188 (1993-08-01), Takeuchi et al.
patent: 5247533 (1993-09-01), Okazaki et al.
patent: 5281830 (1994-01-01), Kotaki et al.
patent: 5290393 (1994-03-01), Nakamura
patent: 5306662 (1994-04-01), Nakamura et al.
patent: 5385862 (1995-01-01), Moustakas

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