P-type GaAs single crystal and its production method

Details P-type GaAs single crystal and its production method P-type GaAs single crystal and its production method

2007-02-13

2007-02-13

Gupta, Yogendra (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Havin growth from molten state

C117S081000, C117S083000, C117S084000, C117S956000, C423S087000, C252S0623GA

Reexamination Certificate

active

10393984

ABSTRACT:
A p-type GaAs single crystal containing Si, Zn, B and In as dopants has an average dislocation density of 100 cm−2or less. It may be produced by cooling a GaAs melt containing Si, Zn, B and In as dopants in a crystal-growing container having a seed crystal placed at a lower end thereof in an upward increasing temperature gradient, to cause a single crystal to grow upward from the seed crystal.

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