P-type-epitaxial-base transistor with base-collector Schottky di

Details P-type-epitaxial-base transistor with base-collector Schottky di P-type-epitaxial-base transistor with base-collector Schottky di

1975-06-20

1977-01-25

James, Andrew J.

357 35, 357 49, H01L 2948, H01L 2956, H01L 2964, H01L 2972

Patent

active

040054691

ABSTRACT:
A clamped epi-base NPN transistor with very short saturation time constant is obtained by ion implantation in the P-type base region to convert a portion thereof to N.sup.- conductivity type contiguous to the collector reach-through region. The converted region is contacted by an extended metal electrode which also contacts the base region. The metal electrode establishes ohmic contact to the base region and Schottky diode contact to the converted region and to the collector region connected thereto.

REFERENCES:
patent: 3463975 (1969-08-01), Biard
patent: 3506893 (1970-04-01), Dhaka
patent: 3699362 (1972-10-01), Jordan
patent: 3861968 (1975-01-01), Magdo et al.
patent: 3878552 (1975-04-01), Rodgers

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