P-type electrode structure and a semiconductor light emitting el

Details P-type electrode structure and a semiconductor light emitting el P-type electrode structure and a semiconductor light emitting el

1997-09-18

1999-04-27

Guay, John

Active solid-state devices (e.g., transistors, solid-state diode

Incoherent light emitter structure

With housing or contact structure

257745, 257744, 257103, 257 94, 257200, H01L 2945

Patent

active

058981900

ABSTRACT:
A p-type electrode structure having low resistance and a high yield light emitting element operable at low operating voltage is disclosed. On a substrate is formed an n-type clad layer, an active layer, a p-type semiconductor layer, a current structure layer, an n-type semiconductor layer and a metal layer. The energy level of a conduction band edge of the n-type semiconductor layer is deeper than that of a valence band edge of the p-type semiconductor layer, and the Fermi level of the metal layer is shallower than the energy level of a conduction band edge of the n-type semiconductor layer.

REFERENCES:
patent: 5286306 (1994-02-01), Menezes
"Graded band gap ohmic contact to p-ZnSe", Applied Physics Letters, vol. 61, 1992, pp. 3160-3162.
by S. Tangiguchi et al., "100h II-VI Blue-green laser diode", Electronics Letters, vol. 32, No. 6, Mar. 1996, pp. 552 and 553.

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