P-side up double heterojunction AlGaAs light-emitting diode

Details P-side up double heterojunction AlGaAs light-emitting diode P-side up double heterojunction AlGaAs light-emitting diode

1988-07-05

1989-09-05

James, Andrew J.

357 16, H01L 3300, H01S 319

Patent

active

048643696

ABSTRACT:
A semiconductor light emitting heterostructure device is disclosed. The device comprises an n-type GaAs substrate, a first n-type laeyr of AlGaAs adjacent to the substrate, a second p-type light emitting AlGaAs layer adjacent to the first layer, and a third p-type AlGaAs layer suitable for bonding to an aluminum contact. The device starts with an n-type substrate which is more readily available and has a p-side up configuration which is more suitable for bonding to an aluminum contact.

REFERENCES:
patent: 4615032 (1986-09-01), Holbrook
patent: 4701774 (1987-01-01), McIlroy et al.
patent: 4719497 (1988-01-01), Tsai
Ishiguro, "High-Efficient GaAlAs Light Emitting Diodes of 660 nm with a Double Heterostructure on a GaAlAs Substrate", Appl. Phys. Lett., vol. 43, No. 11, 12/83.
Kressel and Butler, Semiconductor Lasers and Heterojunction LEDs, 1977, Section 14.6, pp. 510-521.

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