p-Si/n-CdS Heterojunction photovoltaic cells

Details p-Si/n-CdS Heterojunction photovoltaic cells p-Si/n-CdS Heterojunction photovoltaic cells

1980-08-13

1982-12-28

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Cells

136260, 136261, 357 30, 427 74, H01L 3106, H01L 3118

Patent

active

043663370

ABSTRACT:
The invention provides photovoltaic cells of new design in which the two semiconductors have lattice parameters which differ by more than 5%. The n-type semiconductor material is constituted by high conductivity CdS doped with indium in a percentage higher than 1%, and the p-type semiconductor material is constituted by Si. The active surface of said cells is equal to or greater than 1.5 cm.sup.2.

REFERENCES:
H. Okimura et al., "Electrical and Photovoltaic Properties of CdS-Si Junctions," Japan J. Appl Phys., vol. 9, pp. 274-280 (1970).
F. M. Livingstone et al., "Si/CdS Heterojunction Solar Cells," J. Phys. Di. Appl. Phys., vol. 10, pp. 1959-1963 (1977).
M. Arienzo et al., "Single Crystal Solar Cell Heterojunctions by Chemical Vapor Deposition of CdS," pp. 361-369 in Proceedings 2nd European Photovoltaic Solar Energy Conf. (1979), Reidel Pub. Co.
N. Romeo et al., "Growth and Properties of Low Resistivity CdS Films," Thin Solid Films, vol. 55, pp. 413-419 (1978).

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