P-ROM Cell having a low current fusible programming link

Details P-ROM Cell having a low current fusible programming link P-ROM Cell having a low current fusible programming link

1976-06-03

1977-12-20

Fears, Terrell W.

Static information storage and retrieval

Read only systems

Fusible

365104, G11C 1140, G11C 1700

Patent

active

040644936

ABSTRACT:
A programmable cell for a P-ROM (programmable read only memory) matrix includes a bipolar transistor having a fusible link in one of the transistor leads on the substrate. The fusible link is a "necked-down" portion of one of the leads, positioned adjacent the base-collector junction where it is heated by the junction current, causing the links to open at a low fusing current.

REFERENCES:
patent: 3529299 (1970-09-01), Chung et al.
patent: 3848238 (1974-11-01), Rizzi et al.
patent: 3971058 (1976-07-01), Fagan et al.

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