P-N junction semiconductor device and method of fabrication

Details P-N junction semiconductor device and method of fabrication P-N junction semiconductor device and method of fabrication

1989-03-07

1990-12-25

James, Andrew J.

357 15, 357 53, H01L 2934

Patent

active

049807498

ABSTRACT:
A gallium arsenide diode is disclosed which has a very thin resistive layer of a metal oxide, typically titanium oxide, formed annularly on a semiconductor substrate across the exposed annular periphery of a p-n junciton. The titanium oxide layer has a sheet resistance of not less than 10 kilohms per square and creates a Schottky barrier between itself and the neighboring n type region of the substrate. The titanium oxide layer can be formed by first vacuum depositing titanium on the substrate and then heating the titanium layer.

REFERENCES:
patent: 4799100 (1989-01-01), Blanchard et al.
patent: 4862229 (1989-08-01), Mundy et al.
IEEE Transactions on Electron Devices, vol. ED-26, No. 7, Jul. 1979, pp. 1098-1100.
IEEE Transactions on Electron Devices, vol. ED-24, No. 2, Feb. 1977, pp. 107-112.

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