P-N junction negative electron affinity cathode

Details P-N junction negative electron affinity cathode P-N junction negative electron affinity cathode

1993-04-28

1995-04-25

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

257183, H01L 29161

Patent

active

054101662

ABSTRACT:
A cold cathode electron sourcing arrangement wherein a negative electron affinity material such as p-type diamond is disposed adjacent a p-n junction in order that electron charge carriers originating in the p-n junction may be caused to flood the p-type diamond and increase its electrical conductivity and also provide a source for high current flow free electrons repelled from the surface of the diamond material. Theoretical consideration of the high current electron source is also disclosed. Use of the electron source in cathode ray tubes and other electron based apparatus is also included. The disclosed electron sourcing is distinguished from that of previously known n-type diamond.

REFERENCES:
patent: 4277293 (1981-07-01), Nelson et al.
patent: 4307507 (1981-12-01), Gray et al.
patent: 4774991 (1988-10-01), Holden
patent: 5074456 (1991-12-01), Degner et al.
patent: 5129850 (1992-07-01), Kane et al.
patent: 5141460 (1992-08-01), Jaskie et al.
M. W. Geis et al Diamond Cold Cathode IEEE Electron Device Letters, vol. 12, No. 8, pp. 456-459, Aug. 1991.

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