Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2009-06-02
2011-12-13
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S615000, C257SE29093, C257SE21100, C438S478000
Reexamination Certificate
active
08076700
ABSTRACT:
This disclosure describes a semiconductor device that can be used as a mixer at RF frequencies extending from a few tens of GHz into the THz frequency range. The device is composed of narrow bandgap semiconductors grown by solid source molecular beam epitaxy. The device can comprise a GaSb substrate, a AlSb layer on the GaSb substrate, a In0.69Al0.31As0.41Sb0.59layer, on the AlSb layer and wherein the In0.69Al0.31As0.41Sb0.59comprises varying levels of Te doping, a In0.27Ga0.73Sb layer on the In0.69Al0.31As0.41Sb0.59layer, wherein the In0.27Ga0.73Sb layer is Be doped, wherein the first section of the In0.69Al0.31As0.41Sb0.59layer has is Te doped, wherein the second section of the In0.69Al0.31As0.41Sb0.59layer has a grade in Te concentration, and wherein the third section of the In0.69Al0.31As0.41Sb0.59layer is Te doped.
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Ancona Mario
Boos John Bradley
Champlain James G
Magno Richard
Newman Harvey S
Hunnius Stephen T.
Liu Benjamin Tzu-Hung
Ngo Ngan
Ressing Amy L.
The United States of America as represented by the Secretary of
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