P-N junction diodes in silicon carbide

Details P-N junction diodes in silicon carbide P-N junction diodes in silicon carbide

1987-11-03

1990-08-07

Mintel, William

Fishing, trapping, and vermin destroying

357 56, 357 61, 357 63, 357 67, 357 52, 437100, 437192, 437193, H01L 2990

Patent

active

049472186

ABSTRACT:
The invention comprises a method of forming a diode which is operable at high temperature, at high power levels, and under conditions of high radiation density. The method comprises bombarding a region of a substrate of doped silicon carbide having a first conductivity type with high temperature ion implantation of doping ions into the substrate to give the bombarded region an opposite conductivity type. Regions of opposite conductivity type adjacent one another and a respective p-n junction are thereby formed. Ohmic contacts are added to the substrate and to the bombarded region to complete the diode.

REFERENCES:
patent: 2918396 (1959-12-01), Hall
patent: 2937323 (1960-05-01), Kroko et al.
patent: 2937324 (1960-05-01), Kroko
patent: 3063876 (1962-11-01), Le May et al.
patent: 3082126 (1963-03-01), Chang
patent: 3124454 (1964-03-01), Berman
patent: 3176204 (1965-03-01), Taylor
patent: 3254280 (1966-05-01), Wallace
patent: 3308356 (1967-03-01), Rutz
patent: 3340110 (1967-09-01), Grabmaier et al.
patent: 3377210 (1968-03-01), Somerville et al.
patent: 3396059 (1968-08-01), Glammanco
patent: 3649384 (1972-03-01), Kamath
patent: 3662458 (1972-05-01), Formigoni et al.
patent: 3663722 (1972-05-01), Kamath
patent: 3669763 (1972-06-01), Perusek
patent: 4639761 (1987-01-01), Singer et al.
patent: 4757028 (1988-07-01), Kondoh et al.
patent: 4762806 (1988-08-01), Suzuki et al.
Marsh et al., "Ion-Inplanted Junctions and Conducting Layers in SiC," Radiation Effects, 1970, vol. 6, pp. 301-311.
Suzuki et al, "High-Temperature Characteristics of CVD Grown .beta.-SiC P-N Junction Diodes," Amended Abstracts of the 18th (1986 Int'l) Conf. on Solid State Devices and Materials, Tokyo, 1986, pp. 101-104.
Kalinina et al, "Structure and Properties of Ion-Implantation-Dopes P-N Junctions in SiC," Sov. Phys. Semicond., 14(6), Jun. 1980, pp. 652-654.
Furukawa et al, "3C-SiC P-N Junction Diodes," Appl. Phys. Lett., vol. 48, No. 22, 1986, pp. 1616-1617.
Edmond et al, "Electrical Properties of Ion Implanted P-N Junction Diodes in .beta.-SiC," Dept. of Materials, Science and Engineering, NCSU, Raleigh, N.C.
Shibahara et al, "Inversion-Type MOS Field Effect Transistors Using CVD Grown Cubic SiConSi," Jap. J. Appl. Phys., 23, L863 (1984).
Malik et al, "Planar Doped Barriers in GaAs by Molecular Beam Epitaxy," Electronics Letters, 23 Oct. 1980, vol. 16, No. 22, pp. 836-837.
Electrical Properties of Ion Implanted P-N Junction Diodes in B-SiC; Edmond et al; Dept. of Materials, Science and Engineering, NCSU, Raleigh, N.C.
3C-SiC p-n Junction Diodes; Furukawa et al; Appl. Phys. Lett., vol. 48, No. 22, 1986, pp. 1616-1617.

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