Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Patent
1992-10-30
1995-02-07
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
257751, 257603, 257607, H01L 29227, H01L 2973, H01L 2990
Patent
active
053878078
ABSTRACT:
Generally, and in one form of the invention, a p-n junction diffusion barrier is disclosed comprising a first semiconductor layer 28 of p-type conductivity, a second semiconductor layer 32 of n-type conductivity and a third semiconductor layer 30 of p-type conductivity disposed between the first and second layers, the third layer being doped with a relatively low diffusivity dopant in order to form a diffusion barrier between the first and the second semiconductor layers.
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patent: 5132764 (1992-07-01), Bayraktaroglu
patent: 5164797 (1992-11-01), Thornton
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W. S. Hobson, et al., "Carbon-Doped Base GaAs-AlGaAs HBT's Grown by MOMBE and MOCVD Regrowth," IEEE Electron Device Letters, vol. 11, No. 6, Jun. 1990, pp. 241-243.
S. Strite, et al., "Si as a Diffusion Barrier for Ge/GaAs Heterojunctions," Applied Physics Letters, vol. 56, No. 17, 23 Apr. 1990, pp. 1673-1675.
T. H. Chiu, et al., "Chemical Beam Epitaxial Growth of Strained Carbon-Doped GaAs," Applied Physics Letters, vol. 56, No. 2, 9 Jul. 1990, pp. 171-173.
D. Barker, et al., "Extremely High Peak Specific Transconductance AlGaAs/GaAs Heterojunction Bipolar Transistors," IEEE Electron Device Letters, vol. 10, No. 7, Jul. 1989, pp. 313-315.
Donaldson Richard L.
Fahmy Wael
Hille Rolf
Kesterson James C.
Skrehot Michael K.
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