P-N junction devices with group IV element-doped group III-V com

Details P-N junction devices with group IV element-doped group III-V com P-N junction devices with group IV element-doped group III-V com

1992-06-24

1993-12-07

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 21, 257 96, 257102, 437951, H01L 29161, H01L 29205

Patent

active

052685829

ABSTRACT:
This invention embodies p-n junction devices comprising Group III-V compound semiconductors in which the p or n or both p and n regions are formed by a superlattice selectively doped with an amphoteric Group IV element dopant selected from carbon, germanium and silicone. The superlattice includes a plurality of periods, each including two layers. Depending on the conductivity type, only one of the layers in the periods forming the superlattice region of said type of conductivity is selectively doped with said dopant, leaving the other layer in these periods undoped. The superlattice is formed by Molecular Beam Epitaxy technique, and the dopant is incorporated into respective layers by delta-doping as in a sheet centrally deposited between monolayers forming the respective layers of the period. Each period includes 5 to 15 monolayers deposited in the two layers in a numerical ratio corresponding to a cation compositional ratio in the compound semiconductor. Low growth temperatures, e.g. ranging from 410.degree. to 450.degree. C. lead to mirror-like surfaces. For a compound semiconductor Ga.sub.0.47 In.sub.0.53 As, the GaAs/InAs ordered superlattices with eight monolayers per period are grown in a ratio of 0.47/0.53. At free carrier concentrations of 10.sup.16 cm.sup. -3, carrier mobilities of 200 and 2300 cm.sup.2 /Vs for p-type and n-type are obtained with carbon as the amphoteric dopant.

REFERENCES:
patent: 4792832 (1988-12-01), Baba et al.
patent: 5107306 (1992-04-01), Blood et al.
patent: 5136345 (1992-08-01), Kasahara
H. Ito et al. "Carbon Incorporation in (alGa)As, (AlIn)As and (GaIN)AS Ternary Alloys Grown by MBE", Japanese Jrnl. Applied Physics vol. 30, No. 64A, Jun. 1991, pp. L944-L947.
H. Toyoshima, et al. "Growth by Molecular-Beam Epitaxy and Characterization of (InAS).sub.m (GaAs).sub.m Short Period Superlattices . . . " Jrnl. of Applied Physics, vol. 68, No. 3, Aug. 1, 1990, pp. 1281-1286.
T. Akatsuka, et al. "Heavily Carbon-Doped P-Type InGaAs Grown by Metalogranic Molecular Beam Epitaxy", Japanese Jrnl. of Applied Physics, vol. 29, No. 4, Apr. 1990, pp. L537-L539.
K. Nishi, et al. "Structural and Optical Studies on MBE Grown (InAs).sub.m and (InAs).sub.m (AlAs).sub.m (GaAS).sub.m Short-Period . . . " Jrnl. of Crystal Growth 95, (1989), Elsevier Science Publishers B.V. (North-Holland Physics Publishing Div), pp. 202-205.
R. J. Malik et al. "Carbon Doping in MBE of GaAs from a Heated Graphite Filament", Appl. Phys. Lett., vol. 53, 26), Dec. 26, 1988, pp. 2661-2663.

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