p-n Junction controlled field emitter array cathode

Details p-n Junction controlled field emitter array cathode p-n Junction controlled field emitter array cathode

1982-09-23

1985-04-23

Edlow, Martin H.

Electric lamp and discharge devices

With temperature modifier

For lead-in-seal or stem protection

357 32, 357 52, 357 49, 313309, 313310, 313366, 313387, H01L 2906, H01L 2934, H01L 2712

Patent

active

045133085

ABSTRACT:
A Field Emitter Array comprising a semiconductor substrate with an emitter urface formed thereon. A plurality of emitter pyramids is disposed on the emitter surface for emitting an electron current. The magnitude of the electron current emitted by each emitter pyramid I.sub.max, is controlled by a reverse-biased p-n junction associated with each emitter pyramid where I.sub.max =j.sub.sat X A.sub.p-n, j.sub.sat being the saturation current density and A.sub.p-n being the area of the reverse-biased p-n junction associated with each emitter pyramid. A grid, positively biased relative to the emitter surface and the emitter pyramids, is disposed above the emitter surface for creating an electric field that induces the emission of the electron current from the emitter tips.

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