Radiant energy – Invisible radiant energy responsive electric signalling – Semiconductor system
Patent
1992-11-30
1994-07-26
Dzierzynski, Paul M.
Radiant energy
Invisible radiant energy responsive electric signalling
Semiconductor system
25037015, 257428, H01L 31119
Patent
active
053329031
ABSTRACT:
A p-MOSFET total dose dosimeter where the gate voltage is proportional to the incident radiation dose. It is configured in an n-WELL of a p-BODY substrate. It is operated in the saturation region which is ensured by connecting the gate to the drain. The n-well is connected to zero bias. Current flow from source to drain, rather than from peripheral leakage, is ensured by configuring the device as an edgeless MOSFET where the source completely surrounds the drain. The drain junction is the only junction not connected to zero bias. The MOSFET is connected as part of the feedback loop of an operational amplifier. The operational amplifier holds the drain current fixed at a level which minimizes temperature dependence and also fixes the drain voltage. The sensitivity to radiation is made maximum by operating the MOSFET in the OFF state during radiation soak.
REFERENCES:
patent: 3570112 (1971-03-01), Barry et al.
patent: 4788581 (1988-11-01), Knoll et al.
patent: 4808834 (1989-02-01), Kimata
patent: 4996576 (1991-02-01), Lynch et al.
Thomson et al. "Radiation Dosimetry with MOS Sensors", Rad. Protect. Dosimetry, vol. 6, No. 1-4 pp. 121-124 (1984).
Soubra et al, "MOSFET Dosimeters as Rad. Det.", Conference: Amer. Asso. of Phys. in Med. (1990) St. Louis, Mo.
Blaes Brent R.
Buehler Martin G.
California Institute of Technology
Dzierzynski Paul M.
Hanig Richard
Tachner Leonard
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