P-I-N type diode high frequency switch for secondary radar inter

Details P-I-N type diode high frequency switch for secondary radar inter P-I-N type diode high frequency switch for secondary radar inter

1979-11-29

1981-10-20

Hubler, Malcolm F.

Communications: radio wave antennas

Antennas

Balanced doublet - centerfed

333103, G01S 1302, H01P 115

Patent

active

042964148

ABSTRACT:
A P-I-N type diode high frequency switch in a secondary radar interrogation device working with ISLS and RSLS and consisting of a transmitter, two receivers and two antennas. So as to reduce the high cost for P-I-N type diodes, including driver stages for the transmission and reception separation and to eliminate the necessity of an antenna switching unit, the terminals 19 and 20 of a pair of antennas are directly connected through single lines 23 and 24 to band pass filters 5 and 6 connected to respective receivers 7 and 8 with the band pass filters 5 and 6 blocking the transmission signal and allowing reception of received signals and wherein the electrical lengths of the line and the band pass filter is such that the input impedance corresponding to no-load operation occurs at the corresponding antenna terminal for the transmission frequency. The invention can be used in secondary radar transponders operating with two antenna diversity and the high frequency switch of the invention can be used in both civil secondary radar interrogation devices as well as military IFF interrogation devices as, for example, in ground stations.

REFERENCES:
patent: 3032723 (1962-05-01), Ring
patent: 3095538 (1963-06-01), Silberstein
patent: 3374364 (1968-03-01), Concelman
patent: 3474358 (1969-10-01), Geddry et al.
patent: 3678414 (1972-07-01), Hallford
patent: 3720888 (1973-03-01), Manuali
patent: 3745580 (1973-07-01), Burnham
patent: 3909751 (1975-09-01), Tang et al.
patent: 3916349 (1975-10-01), Ranghelli et al.
patent: 4016516 (1977-04-01), Santer et al.

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