p-i-n Photodiodes

Details p-i-n Photodiodes p-i-n Photodiodes

1982-07-29

1984-04-17

Edlow, Martin H.

357 30, 357 58, 357 13, 357 91, H01L 29161

Patent

active

044438095

ABSTRACT:
Photodiodes (10) are fabricated in a single step diffusion process which exploits the characteristic of certain acceptors to form an anomalous diffusion profile (VI) including shallow and deep fronts (VIa and b) joined by an upwardly concave segment (VIc). By performing this type of diffusion into a low-doped n.sup.- -type body (12) with a carrier concentration (VII) below that of the concave segment, a p.sup.+ -p.sup.- junction (15) is formed at the depth of the concave segment and a p.sup.- -n.sup.- junction (17) is formed at a greater depth. The zone (16) between the junctions is at least partially depleted and forms the active region of a p.sup.+ -p.sup.- -n.sup.- photodiode. Specifically described are InP:Cd photodiodes.

REFERENCES:
Tuck et al., J. Phys. D: Appl. Phys., vol. 8, 1975, p. 1806.
Tuck et al., Journ. of Materials Science, vol. 7, 1972, p. 581.
Lee et al., Appl. Phys. Lett., 35(7), Oct. 1, 1979, p. 511.
Burrus et al., Electronics Letters, vol. 15, No. 20, Sep. 27, 1979, p. 655.

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