P-I-N photodetector having a burried junction

Details P-I-N photodetector having a burried junction P-I-N photodetector having a burried junction

1988-03-23

1989-12-12

Hille, Rolf

357:16, 357 32, 357 20, H01L 2912

Patent

active

048871389

ABSTRACT:
A P-I-N photodetector is fabricated having a first upper light transmitting n.sup.- InP layer overlaying a second light absorbing layer of n.sup.- GaInAs in turn overlaying a substrate of n+InP or N+GaAs, together with p+ ion implant zones formed within the first layer which completely penetrate the first layer and partially penetrate the second layer to form a buried junction within the second layer, the junction being exposed to ambient air. The implants are preferably formed by ion implantation of Be, Cd, Zn or Mg.

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patent: 4488038 (1984-12-01), Harrison et al.
patent: 4499483 (1985-02-01), Yamazaki et al.
patent: 4544938 (1985-10-01), Scholl

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