P-Glass reflow technique

Details P-Glass reflow technique P-Glass reflow technique

1984-03-02

1985-01-29

Newsome, John H.

Coating processes

Electrical product produced

Welding electrode

427 55, 219121L, B05D 306

Patent

active

044966083

ABSTRACT:
P-glass is heated to reflowing temperature by the radiant heating of a material overlying the P-glass layer. The coating layer is chosen such that its reflectivity increases at its melting temperature, and that temperature corresponds to the P-glass reflow temperature. Increased radiant heating will not increase the energy absorbed by the coating because more of the radiation is reflected. The temperature of the coating is thus limited providing controlled conductive heating of the P-glass layer.

REFERENCES:
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patent: 4279671 (1981-07-01), Komatsu
patent: 4284659 (1981-08-01), Jaccodine et al.
patent: 4318752 (1982-03-01), Tien
patent: 4355454 (1982-10-01), Tasch, Jr. et al.
patent: 4414242 (1983-11-01), Nishimura et al.
Electronics, Nov. 17, 1983, "IEDM Ideas Foreshadow Future Circuit Solutions" by R. Godin.
International Electron Devices Meeting, Dec. 5-7, 1983, Washington DC, "Multilayer CMOS Device Fabricated on Laser Recrystallized Silicon Islands", and Indirect Laser Annealing of Polysilicon for 3-Dimensional IC's.
IBM Technical Disclosure Bulletin, vol. 23, No. 9, Feb., 1981, "Method for Laser Annealing of Polysilicon With Reduced Damage" by J. Leas and J. Lloyd.

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