P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor

Details P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor

2008-06-02

2010-06-01

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S183000, C257S190000, C257SE29246, C257SE21403

Reexamination Certificate

active

07728356

ABSTRACT:
An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.

REFERENCES:
patent: 2005/0077541 (2005-04-01), Shen et al.
patent: 2006/0197109 (2006-09-01), Saxler
patent: 2006/0214188 (2006-09-01), Kawasaki et al.
PCT International Search Report, International Application No. PCT/US2008/065543, Filing Date Jun. 2, 2008.
Lanford et al., Electronics Letters, vol. 41, p. 449 (2005).
Cai et al., IEEE Electron Device Letters, vol. 26, p. 435 (2005).
Hu et al., “Enhancement Mode AlGaN/GaN HFET with selectively grown pn junction gate,” Electronics Letters, vol. 36, p. 753 (2000).
Tsuyukuchi et al., “Low leakage current Enhancement Mode AlGaN/GaN Heterostructure Field Effect Transistor using p-type gate contact,” Japanese Journal of Applied Physics 45(11), L319-L321 (2006).

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