P-channel memory cell and method for forming the same

Details P-channel memory cell and method for forming the same P-channel memory cell and method for forming the same

1996-03-04

2000-05-09

Zarabian, A.

Static information storage and retrieval

Floating gate

257316, G11C 1604

Patent

active

06061269&

ABSTRACT:
The present invention concerns an electrically programmable and erasable non-volatile memory cell having a traditional structure but being inverted in the conductivity type of the component elements and lacking the second source diffusion.

REFERENCES:
patent: 3660819 (1972-05-01), Frohman-Bentchkowsky
patent: 4267558 (1981-05-01), Guterman
patent: 5326999 (1994-07-01), Kim et al.
patent: 5817536 (1998-10-01), Nayak
R. Warner et al., "Integrated Circuits-Design Prin +Fabr," .COPYRGT.1965 Motorola, Inc., McGraw Hill Book Co., pp. 69-94.
Tarui, Yasuo, et al., "Proposal of Electrically Reprogrammable, Nonvolatile Semiconductor Memory," Proceedings of the 3.sup.rd Conference on Solid State Devices, Tokyo, Japan, 1971, pp. 155-162.

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