p channel filed effect transistor and sensor using the same

Details p channel filed effect transistor and sensor using the same p channel filed effect transistor and sensor using the same

2004-03-25

2008-03-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257S414000, C257SE29299

Reexamination Certificate

active

07339212

ABSTRACT:
A p channel field effect transistor in which the sensitivity of an enzyme can be enhanced by immobilizing the enzyme directly on an FET channel surface (diamond surface), as well as a sensor including the same, is provided. A diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals is treated under the action of glutaraldehyde OHC(CH2)3CHO (30), so that the glutaraldehyde (30) is immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. Subsequently, urease (29) is further applied thereto, so that the amino group (31) of the urease (29) is bonded to the glutaraldehyde (30). That is, the urease (29) can be immobilized on the diamond surface (22) having mixed hydrogen terminals, oxygen terminals, and amino terminals. When the urea concentration is increased from 10−6M to 10−2M, the threshold voltage shifts by about 0.1 V in the positive direction, and the sensitivity to urea concentration of 30 mV/decade is exhibited.

REFERENCES:
patent: 4968400 (1990-11-01), Shimomura et al.
patent: 8-240555 (1996-09-01), None
patent: 2001-272372 (2001-10-01), None
patent: 2002-286692 (2002-10-01), None
patent: 2004-109020 (2004-04-01), None

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