P and n-type microcrystalline semiconductor alloy material inclu

Details P and n-type microcrystalline semiconductor alloy material inclu P and n-type microcrystalline semiconductor alloy material inclu

1987-07-27

1988-10-04

Weisstuch, Aaron

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

136258, 136259, 252 623R, 420556, 420578, 420903, 357 2, 357 30, 357 59, H01L 3106

Patent

active

047754257

ABSTRACT:
An n-type microcrystalline semiconductor alloy material including a band gap widening element; a method of fabricating p-type microcrystalline semiconductor alloy material including a band gap widening element; and electronic and photovoltaic devices incorporating said n-type and p-type materials.

REFERENCES:
patent: 4476346 (1984-10-01), Tawada et al.
patent: 4604636 (1986-08-01), Dalal
patent: 4612409 (1986-09-01), Hamakawa et al.
Y. Hattori et al., Conf. Record, 19th IEEE Photovoltaic Specialists Conf. (May 1987), pp. 689-694.
A. Hiraki et al., J. Non-Crystalline Solids, vols. 59-60, pp. 791-794 (1983).

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