Coating processes – Measuring – testing – or indicating – Thickness or uniformity of thickness determined
Reexamination Certificate
2000-06-06
2001-05-01
Bueker, Richard (Department: 1763)
Coating processes
Measuring, testing, or indicating
Thickness or uniformity of thickness determined
C427S255270, C427S582000, C427S583000, C118S712000, C118S715000, C118S722000
Reexamination Certificate
active
06224934
ABSTRACT:
CROSS-REFERENCE TO RELATED APPLICATIONS
This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 11-158851, filed Jun. 7, 1999 the entire contents of which are incorporated herein by reference.
BACKGROUND OF THE INVENTION
The present invention relates to an ozone-processing apparatus for a semiconductor process system, and particularly, to an ozone-processing apparatus for subjecting a target substrate, such as a semiconductor wafer, to an oxidizing process or a reforming process. The term “semiconductor process” used herein includes various kinds of processes which are performed to manufacture a semiconductor device or a structure having wiring layers, electrodes, and the like to be connected to a semiconductor device, on a target substrate, such as a semiconductor wafer or an LCD (Liquid Crystal Display) substrate, by forming semiconductor layers, insulating layers, and conductive layers in predetermined patterns on the target substrate.
In the manufacturing process of a semiconductor device, activated oxygen atoms (oxygen radicals) are used, when a target substrate, such as a semiconductor wafer, is subjected to an oxidizing process or a reforming process. In such a case, ozone (O
3
) gas is supplied to a process chamber accommodating the target substrate, and is activated by, e.g., an ultraviolet-ray (UV) lamp to generate oxygen radicals.
U.S. Pat. Appln. Ser. No. 08/889,590 (Jpn. Pat. Appln. KOKAI Publication No. 10-79377) discloses a processing apparatus of this type. The apparatus includes a process chamber with an ultraviolet-ray transmission window arranged in a wall defining the chamber, and UV lamps facing the window. The UV lamps are accommodated in a lamp chamber arranged on the process chamber. During a process, ozone in a process gas supplied into the process chamber is activated by ultraviolet rays emitted from the UV lamps. Thus, oxygen atoms (oxygen radicals) are generated and used for processing a semiconductor wafer placed in the process chamber.
Where activated oxygen (O*) is generated from ozone by Uv lamps, the light quantity of the UV lamps influences the quality of a processed target substrate. The light quantity of the UV lamps has to be properly measured to see whether the UV lamps degrade or not. Conventionally, during intervals between processes, the lid of a port formed on a process chamber is opened, and a light-quantity sensor attached to a rod-like jig is inserted therethrough, to measure the light quantity of UV lamps.
This measuring method, however, causes the interior of the process chamber, which has been supplied with ozone, to be exposed to the atmosphere, and thus may deteriorate the processing environment in the process chamber and the operation environment around the process chamber. Furthermore, it is necessary to purge the process chamber with nitrogen gas prior to the lid of the port being opened, and thus the operation becomes complicated and time-consuming, thereby increasing the operation cost and the downtime of the apparatus.
BRIEF SUMMARY OF THE INVENTION
In an ozone-processing apparatus for a semiconductor process system, in which a process is performed while ozone gas is excited by ultraviolet rays, an object of the present invention is to prevent the processing environment in a process chamber and the operation environment around a process chamber from being deteriorated, when the light quantity of the ultraviolet rays is measured.
In an ozone-processing apparatus for a semiconductor process system, in which a process is performed while ozone gas is excited by ultraviolet rays, another object of the present invention is to make the operation of measuring the light quantity of the ultraviolet rays easier, so that the operation cost and the downtime of the apparatus are reduced.
According to a first aspect of the present invention, there is provided an ozone-processing apparatus for a semiconductor process system, comprising:
an airtight process chamber;
a support member configured to support a target substrate within the process chamber;
a supply mechanism configured to supply a process gas containing ozone into the process chamber;
an exhaust mechanism configured to exhaust the process chamber;
a window configured to transmit ultraviolet rays and formed in a wall defining the process chamber;
an auxiliary chamber arranged on the process chamber, such that the process and auxiliary chambers are partitioned by the window;
a light source configured to emit ultraviolet rays and disposed in the auxiliary chamber to face the window, such that a measurement space is defined between the window and the light source in the auxiliary chamber; and
a measuring unit including a sensor configured to measure light quantity of the light source, and to be detachably inserted into the measurement space.
According to a second aspect of the present invention, there is provided an ozone-processing apparatus for a semiconductor process system, comprising:
an airtight process chamber;
a support member configured to support a target substrate within the process chamber;
a supply mechanism configured to supply a process gas containing ozone into the process chamber;
an exhaust mechanism configured to exhaust the process chamber;
a window configured to transmit ultraviolet rays and formed in a wall defining the process chamber;
an auxiliary chamber arranged on the process chamber, such that the process and auxiliary chambers are partitioned by the window;
a light source configured to emit ultraviolet rays and disposed in the auxiliary chamber to face the window, such that a measurement space is defined between the window and the light source in the auxiliary chamber, the light source comprising a plurality of ultraviolet-ray lamps arrayed along the window and in a first direction; and
a measuring unit including a sensor configured to measure light quantity of the light source, and to be detachably inserted into the measurement space, the measuring unit comprising an arm supporting the sensor, and a first guide configured to guide the arm such that the arm is movable substantially parallel to the window and in the first direction.
According to a third aspect of the present invention, there is provided a method of measuring light quantity of ultraviolet rays in an ozone-processing apparatus for a semiconductor process system, wherein the apparatus comprises
an airtight process chamber,
a support member configured to support a target substrate within the process chamber,
a supply mechanism configured to supply a process gas containing ozone into the process chamber,
an exhaust mechanism configured to exhaust the process chamber,
a window configured to transmit ultraviolet rays and formed in a wall defining the process chamber,
an auxiliary chamber arranged on the process chamber, such that the process and auxiliary chambers are partitioned by the window, and
a light source configured to emit ultraviolet rays and disposed in the auxiliary chamber to face the window,
the method comprising the steps of:
securing a measurement space between the window and the light source in the auxiliary chamber, such that a sensor configured to measure light quantity of the light source is detachably inserted into the measurement space;
inserting the sensor into the measurement space from outside of the measurement space; and
measuring the light quantity of the light source by the sensor.
Additional objects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objects and advantages of the invention may be realized and obtained by means of the instrumentalities and combinations particularly pointed out hereinafter.
REFERENCES:
patent: 4711790 (1987-12-01), Morishige
patent: 6143081 (2000-11-01), Shinriki
patent: 6159297 (2000-12-01), Herchen
Hasei Masaaki
Ishikawa Kenji
Nakano Tetsuya
Shou Qian Shao
Bueker Richard
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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