Measuring and testing – Gas analysis – Gas chromatography
Patent
1988-10-06
1989-12-12
Williams, Hezron E.
Measuring and testing
Gas analysis
Gas chromatography
422 98, G01N 2700
Patent
active
048859290
ABSTRACT:
An ozone gas sensor comprising a film type semiconductor element including a substrate and a semiconductor film consisting of a metallic oxide formed on the substrate, and a layer of silica formed on a surface of the film type semiconductor element. At least one thin film layer of one or a plurality of types selected from metals and metal oxides is interposed between the semiconductor film and the layer of silica.
REFERENCES:
patent: 4203946 (1980-05-01), Ryerson
patent: 4240799 (1980-12-01), Ryerson
patent: 4324761 (1982-04-01), Harris
patent: 4343768 (1982-08-01), Kimura
patent: 4580439 (1986-04-01), Manaka
Improvement on Output Decrease of Thin Film Type O.sub.3 Gas Sensor Associated with Mixing of Interfering Gas Semi Conductor Type O.sub.3 Semiconductor Type O.sub.3 Sensor.
Sensor Ozone Sensor with the Use of Thin Films of Transition Metal Oxides.
Kasahara Riichiro
Takada Tadashi
New Cosmos Electric Co. Ltd.
Williams Hezron E.
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