Ozone gas processing for ferroelectric memory circuits

Details Ozone gas processing for ferroelectric memory circuits Ozone gas processing for ferroelectric memory circuits

1993-05-19

1994-12-20

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 60, 437247, 148DIG3, H01L 2170

Patent

active

053745787

ABSTRACT:
A method for forming a ferroelectric capacitor for use an integrated circuit establishing one layer over another and then annealing the structure, using an oxygen or ozone anneal, after each layer is established. In particular, an ozone anneal is used after the establishment of a layer of ferroelectric material.

REFERENCES:
patent: 4589056 (1986-05-01), Stimmell
patent: 5043049 (1991-08-01), Takenaka
patent: 5075246 (1991-12-01), Re et al.
patent: 5138520 (1992-08-01), McMillan et al.
patent: 5142437 (1992-08-01), Kammerdiner et al.
patent: 5142438 (1992-08-01), Reinberg et al.

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