Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1993-03-25
1994-11-15
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257536, 257639, H01L 2702
Patent
active
053651049
ABSTRACT:
An oxynitride passivation layer and/or fuse protective layer for an SRAM cell having load resistors, where the composition of the oxynitride layer minimizes the effect of hydrogen diffusion on the resistance of underlying load resistors. The index of refraction of the oxynitride is between 1.60 and 1.85. This oxynitride does not substantially diffuse hydrogen into the load resistors even when heated to temperatures over 400.degree. C., and hence, avoids altering resistance during subsequent annealing steps.
REFERENCES:
patent: 4543707 (1985-10-01), Ito et al.
patent: 4855804 (1989-08-01), Bergami et al.
patent: 4907064 (1990-03-01), Yamazaki et al.
patent: 5166771 (1992-11-01), Godinho et al.
patent: 5172211 (1992-12-01), Godinho et al.
Godinho Norman
Liaw Hai-Pyng
Clark S. V.
Hille Rolf
Paradigm Technology, Inc.
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