Oxynitride film and its formation method, and method for forming

Details Oxynitride film and its formation method, and method for forming Oxynitride film and its formation method, and method for forming

1995-11-20

1997-04-01

Turner, Archene

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Including components having same physical characteristic in...

20419223, 20419237, 20429811, 427 99, 4271261, 427255, 4272552, 4272553, 427325, 427344, 427574, 427579, 428195, 428210, 428446, 428698, 428699, 428701, 428702, 437255, 437241, H01L 2176

Patent

active

056164017

ABSTRACT:
An oxynitride film whose compositional ratio between oxygen and nitrogen varies in the thickness direction thereof is formed on a main surface of a silicon substrate, on which a silicon nitride film is formed. The oxynitride film is so controlled in composition that said film has a portion near the silicon substrate which has a composition close to that of a silicon oxide film and that said film has a composition closer to that of a silicon nitride film toward the silicon nitride film. The silicon nitride film and the oxynitride film are patterned in a desired form. Using the patterned silicon nitride film and oxynitride film as a mask, the main surface of the silicon substrate is thermally oxidized. The use of the oxynitride film whose composition varies in the thickness direction thereof can suppress bird's beak extension of an element isolation oxide film and also formation of crystal defects in the main surface of the silicon substrate.

REFERENCES:
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patent: 4616245 (1986-10-01), Topich et al.
patent: 4657630 (1987-04-01), Agatsuma
patent: 4668365 (1987-05-01), Foster et al.
patent: 4876582 (1989-10-01), Janning
patent: 4901133 (1990-02-01), Curran et al.
patent: 5015353 (1991-05-01), Hubler et al.

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