Oxynitride-dioxide composite gate dielectric process for MOS man

Details Oxynitride-dioxide composite gate dielectric process for MOS man Oxynitride-dioxide composite gate dielectric process for MOS man

1995-02-02

1995-11-07

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437239, 437913, 437920, 437978, 148DIG43, H01L 218234

Patent

active

054647835

ABSTRACT:
A method for making gate dielectrics for MOS devices includes first forming a silicon oxynitride layer, and then forming a silicon dioxide layer that underlies the oxynitride layer. The oxynitride layer functions as a membrane for controlled diffusion of oxygen to the oxidation region of the silicon substrate.

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