Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-31
2005-05-31
Thomas, Tom (Department: 2815)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S724000, C438S726000, C430S271100, C430S327000, C427S532000, C427S535000, C427S539000, C427S575000
Reexamination Certificate
active
06900138
ABSTRACT:
The present invention includes a method for preventing distortion in semiconductor fabrication. The method comprises providing a substrate comprising a film comprising silicon nitride. The substrate is treated in a vacuum of about 3.0-6.5 Torr in an atmosphere comprising oxygen plasma wherein the oxygen plasma flow rate is at least about 300 sccm oxygen. A resist is applied to the treated substrate and the resist is patterned over the treated substrate.
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Fischer Mark
Yin Zhiping
Diaz JoséR.
Thomas Tom
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