Oxygen plasma etch process post contact layer etch back

Details Oxygen plasma etch process post contact layer etch back Oxygen plasma etch process post contact layer etch back

1995-04-03

1996-05-28

Fourson, George

Fishing, trapping, and vermin destroying

437192, 437228, 437246, H01L 2128

Patent

active

055211216

ABSTRACT:
A process for preventing the formation of precipitates on a substrate surface containing Ti (e.g., TiN) after a contact layer (e.g., tungsten layer) etch back. The process involves treating the wafer with an oxygen plasma etch after the tungsten etch back to remove the precursors of a precipitate. The oxygen plasma etch is performed at temperature of about 260.degree. C. and a pressure about 4 torr.

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