Oxygen ion conductor device, method for fabricating oxygen...

Details Oxygen ion conductor device, method for fabricating oxygen... Oxygen ion conductor device, method for fabricating oxygen...

2007-12-11

2007-12-11

Everhart, Caridad (Department: 2891)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Chemically responsive

C257SE29167, C257S414000, C438S766000

Reexamination Certificate

active

11064999

ABSTRACT:
A first electrode thin film is formed on an upper surface of the oxygen ion conductive thin film so as to have a through hole. A resistor is formed on part of the upper surface of the oxygen conductive thin film located in the through hole. Thus, the oxygen ion conductive thin film can be directly heated by the resistor, so that oxygen ions can be speedily transferred with a low power. Therefore, the oxygen ion conductivity of the oxygen ion conductive thin film can be improved.

REFERENCES:
patent: 6165336 (2000-12-01), Maki et al.
patent: 6787014 (2004-09-01), Hasei et al.
patent: 05-097552 (1993-04-01), None
patent: 06-258280 (1994-06-01), None
patent: 09-241003 (1997-09-01), None

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