Oxygen doped SiC for Cu barrier and etch stop layer in dual...

Semiconductor device manufacturing: process – Having diamond semiconductor component

Reexamination Certificate

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C438S627000, C438S643000, C438S780000, C438S789000, C438S931000, C257S077000

Reexamination Certificate

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07052932

ABSTRACT:
A method of forming a dual damascene structure with improved performance is described. A first etch stop layer comprised of oxygen doped SiC is deposited on a SiC barrier layer to form a composite barrier/etch stop layer on a substrate. The remainder of the damascene stack is formed by sequentially depositing a first dielectric layer, a second oxygen doped SiC etch stop layer, and a second dielectric layer. A via and overlying trench are formed and filled with a diffusion barrier layer and a metal layer. The oxygen doped SiC layers have a lower dielectric constant than SiC or SIGN and a higher breakdown field than SiC. The etch selectivity of a C4F8/Ar etch for a SiCOH layer relative to the oxygen doped SiC layer is at least 6:1 because of a lower oxygen content in the oxygen doped SiC layer.

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