Oxygen content system and method for controlling memory...

Details Oxygen content system and method for controlling memory... Oxygen content system and method for controlling memory...

2005-12-06

2005-12-06

Smith, Brad (Department: 2891)

Semiconductor device manufacturing: process

Making passive device

Resistor

C438S381000, C438S003000

Reexamination Certificate

active

06972238

ABSTRACT:
A memory cell and method for controlling the resistance properties in a memory material are provided. The method comprises: forming manganite; annealing the manganite in an oxygen atmosphere; controlling the oxygen content in the manganite in response to the annealing; and, controlling resistance through the manganite in response to the oxygen content. The manganite is perovskite-type manganese oxides with the general formula RE1-xAExMnOy, where RE is a rare earth ion and AE is an alkaline-earth ion, with x in the range between 0.1 and 0.5. Controlling the oxygen content in the manganite includes forming an oxygen-rich RE1-xAExMnOyregion where y is greater than 3. A low resistance results in the oxygen-rich manganite region. When y is less than 3, a high resistance is formed. More specifically, the process forms a low resistance oxygen-rich manganite region adjacent an oxygen-deficient high resistance manganite region.

REFERENCES:
patent: 6870755 (2005-03-01), Rinerson et al.
patent: 2004/0160817 (2004-08-01), Rinerson et al.
“Preparation and properties of epitaxial La 0.7 Ca 0.3 MnO 3-delta films with reduced carrier density” Korr et al. J. Phys. condens. Matter 12 (200) 7099-7109.
Article entitled, “Electric-Pulse-Induced Reversible Resistance Change Effect in Magnetoresistive Films”, by S. Q. Liu, N. J. Wu and A. Ignatiev, published in Applied physics Letters, vol. 76, No. 19, May 8, 2000, pp 2749-2751.

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